Canon FPA 3000 FPA 3000 iW

Listing description

DETAILS:

Wafer size: 4" / 6" / 8" (customer may specify per their requirement)

Reticle size:
6" Square

Throughput: 115 wph (14 shot / 50mm / 8” Wafer)

;
120 wph (9 shot / 50mm / 6" Wafer)

General Specification and Information:

• Model:
FPA 3000 iw

• Lens Type:
UL51

• Stage Type:
ABS (Air Guided Bearing)

• Chamber Type:
CD80

Projection Optics:

• Projection Magnification: 1/2 X

• Exposure Light: 365nm

• Numerical Aperture:
0.24

• Field Size:
50X50mm ~ 47.9~52.0mm

Standard Illumination:

• Exposure Light:
i-Line

• Light Source:
2.0KW Super High Pressure Hg Lamp

• Intensity:
>2500W/m2

• Uniformity:
< 1.2%

• Masking Blade:
4 blades independent

(1.0X1.0mm~52X52mm on wafer)

Printing Performance:

• Resolution:
<0.8µm

• Depth of Focus:
>4.0µm

• Image Field Deviation:
<2.5µm

• Distortion:
<±0.11µm

Focus/Leveling Performance:

• Focus Repeatability:
<0.10µm (3sigma)

• Leveling Repeatability:
<7ppm (3sigma)

• Minimum Compensation:
Range >100ppm

Wafer Alignment Performance:

• Lighting Source:
He-Ne Laser, Broad Band(Halogen Lamp)

• Signal Process:
TV Image Processing

• System:
Off Axis TTL

• Mode:
AGA

Standard Stage Specification:

• Step Accuracy:
<0.05µm (3sigma)

• Scaling:
<±1.0ppm

• Orthogonality:
<±1.0ppm

Standard Alignment Specification:

• Reticle Rotation Accuracy:
<±0.02µm

• Wafer Alignment:
<0.10µm mean + 3sigma

• Reticle Rotation Repeatability:
<0.05µm)

This equipment is located in US