Lam Research TCP 9600SE

Listing description

Lam Model TCP 9600SE

Process gases: CI2, BCI3, HBr, SF6, CF4, Ar, N2, 02, He. Process pressure 0-100 mTorr, top electrode power 0 - 125OW, lower electrode power 0- 1200W. Process temperature 55°C. Adjustable monochromator is used for endpoint detection. It is equipped with a decoupled source quartz (DSQ) strip module to remove (strip) the photoresist from the wafers. The DSQ process drastically reduces the probability of particle contamination and increases the efficiency of the strip process.

Key Specifications:

Standard recipe 600/601 for AI etching:
Etch rate: 800 nm/min
Photoresist etch rate:400nm/min,
Standard recipe 640 for AI203 etching:
Etch rate: 100-120nm/min

Substrate size:
150 mm diameter

Allowed Materials:
AI, AI203, Ti02, poly Si, Nb and a variety of nitrides may be etched using CI-chemistry

Forbidden Materials:
Non IC-compatible materials

This equipment is located in US